| Title |
Detection Analysis of Burn-in Socket Defects using a Daisy-chain Coplanar Waveguide |
| Authors |
(Donghee Yu) ; (Moonjung Kim) |
| DOI |
https://doi.org/10.5573/IEIESPC.2021.10.3.273 |
| Keywords |
Burn-in socket; Daisy-chain board; Coplanar waveguide; Defect; S-parameter; Z-parameter |
| Abstract |
In this paper, we report the results of a study on the detection and location of defects in a burn-in socket and a printed circuit board. A defect detection method was developed using a daisy-chain coplanar waveguide and S-parameter and Z-parameter analysis methods. The results were verified using 3D electromagnetic field simulation. The burn-in socket is composed of a number of contact pins, so a method for inspecting all the pins at once is required for efficient defect detection. A printed circuit board with a coplanar waveguide was designed and placed above and below the burn-in socket to form a daisy-chain path passing through all the pins. Open and short defects were placed at 6 points along the daisy-chain path. S-parameters for daisy-chain paths with and without defects were calculated, and the results were compared to analyze whether defects occurred in a path. Both types of defects cause impedance discontinuity in the daisy-chain path and result in changes in the S-parameter. The movement of the defect location in the daisy-chain path causes changes in the capacitance and inductance, which eventually change the Z-parameter. It was verified that defects and their locations in the daisy-chain path can be detected by analyzing the S-parameter and Z-parameter. |